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| ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2406L ND2410L BSS129 230 V(BR)DSV Min (V) 240 rDS(on) Max (W) 6 10 20 VGS(off) (V) -1.5 to -4.5 -0.5 to -2.5 -0.7 (min) ID (A) 0.23 0.18 0.15 Features D D D D D High Breakdown Voltage: 260 V Normally "On" Low rDS Switch: 3.5 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance TO-226AA (TO-92) 1 Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching Applications D D D D D Normally "On" Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-92-18CD (TO-18 Lead Form) 1 S S G 2 D 2 D 3 Top View ND2406L ND2410L G 3 Top View BSS129 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg ND2406L 240 "30 0.23 0.14 0.9 0.8 0.32 156 ND2410L 240 "30 0.18 0.12 0.9 0.8 0.32 156 -55 to 150 BSS129 230 "20 0.15 Unit V A 0.6 1.0 0.4 125 W _C/W _C Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198. Applications information may also be obtained via FaxBack, request document #70612. Siliconix S-52426--Rev. C, 14-Apr-97 1 ND2406L/2410L, BSS129 Specificationsa Limits ND2406L ND2410L BSS129 Parameter Static Symbol Test Conditions Typb Min Max Min Max Min Max Unit VGS = -9 V, ID = 10 mA Drain-Source DiS Breakdown Voltage g V(BR)DSV VGS = -5 V, ID = 10 mA VGS = -3 V, ID = 250 mA VDS = 5 V, ID = 10 mA Gate-Source Gate Source Cutoff Voltage VGS( ff) GS(off) VDS = 3 V, ID = 1 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = 180 V, VGS = -9 V TJ = 125_C Drain Cutoff Current ID( ff) D(off) VDS = 180 V, VGS = -5 V TJ = 125_C VDS = 230 V, VGS = -3 V TJ = 125_C Drain-Saturation Currentc IDSS VDS = 10 V, VGS = 0 V VGS = 2 V, ID = 30 mA Drain-Source On Resistance Drain Source On-Resistancec rDS( ) DS(on) VGS = 0 V, ID = 30 mA TJ = 125_C VGS = 0 V, ID = 14 mA Forward Transconductance c Common Source Output Conductancec gf fs gos VDS = 25 V, ID = 250 mA VDS = 10 V, ID = 30 A 260 260 260 240 240 230 -1.5 -4.5 -0.5 -2.5 -0.7 "10 "50 1 200 1 200 0.1 200 mA "10 "50 "100 nA V Gate-Body Gate Body Leakage IGSS 350 3.3 4.5 7.2 4 375 110 70 40 40 mA 6 15 10 25 20 140 W mS mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = -5 V V 5 f = 1 MHz 70 20 10 120 30 15 120 30 15 pF Switchingd Turn-On Turn On Time td(on) tr td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = 25 V, RL = 830 W ID ^ 30 mA VGEN = -5 V mA, RG = 25 W 15 75 ns 40 100 Turn-Off Time VDDV24 2 Siliconix S-52426--Rev. C, 14-Apr-97 ND2406L/2410L, BSS129 Typical Characteristics (25_C Unless Otherwise Noted) 200 Output Characteristics (ND2406) 200 VGS = 2 V -0.8 V -1 V I D - Drain Current (mA) 160 Output Characteristics (ND2410) VGS = 2 V 0.2 V 0V 0.4 V 120 -0.4 V 80 -0.6 V 40 -0.8 V -1 V 0 0.4 0.8 1.2 1.6 2.0 -0.2 V I D - Drain Current (mA) 160 -0.4 V -0.6 V 120 -1.2 V 80 -1.4 V -1.6 V 40 -1.8 V -2 V 0 0 0.4 0.8 1.2 1.6 2 VDS - Drain-to-Source Voltage (V) 500 0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics (ND2406) 500 VDS = 10 V TC = -55_C 125_C 400 I D - Drain Current (mA) 25_C Transfer Characteristics (ND2410) VDS = 10 V 400 I D - Drain Current (mA) 300 300 200 200 25_C TC = 125_C -55_C 100 100 0 -4.5 -3.5 -2.5 -1.5 -0.5 0.5 0 -4.5 -3.5 -2.5 -1.5 -0.5 0.5 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) 10 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS(on) IDSS 1000 25 On-Resistance vs. DrainCurrent VGS = 0 V 6 600 rDS(on) - On-Resistance (W ) rDS(on) - On-Resistance (W ) 8 800 20 I DSS - Drain Current (mA) 15 ND2410 10 4 400 ND2406 2 rDS @ ID = 30 mA, VGS = 0 V IDSS @ VDS = 7.5 V, VGS = 0 V 0 -1 -2 -3 -4 -5 -6 VGS(off) - Gate-Source Cutoff Voltage (V) 200 5 0 0 10 100 ID - Drain Current (mA) 1K Siliconix S-52426--Rev. C, 14-Apr-97 3 ND2406L/2410L, BSS129 Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd) 2.25 rDS(on) - Drain-Source On-Resistance (Normalized) 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -10 30 70 110 150 TJ - Junction Temperature (_C) Normalized On-Resistance vs. Junction Temperature g fs - Forward Transconductance (mS) VGS = 0 V I D = 30 mA 350 300 Forward Transconductance vs. Drain Current 25_C 150_C 250 200 150 100 50 0 1 10 -55_C VDS = 10 V Pulse Test 80 ms, 1% Duty Cycle 100 1K ID - Drain Current (mA) Capacitance 240 200 C - Capacitance (pF) 160 120 80 40 C rss 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 3 1 C oss C iss VGS = -5 V f = 1 MHz t - Switching Time (ns) 100 300 Load Condition Effects on Switching tf t d(off) tr VDD = 25 V VGS = 0 to -5 V RG = 25W td(on) 10 10 ID - Drain Current (mA) 100 1 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 0.01 Single Pulse 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) 4 Siliconix S-52426--Rev. C, 14-Apr-97 |
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